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Quantum Spin Hall Effect in Two-Monolayer-Thick InN/InGaN Coupled Multiple Quantum Wells
In this study, we present a theoretical study of the quantum spin Hall effect in InN/InGaN coupled multiple quantum wells with the individual well widths equal to two atomic monolayers. We consider triple and quadruple quantum wells in which the In content in the interwell barriers is greater than o...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421133/ https://www.ncbi.nlm.nih.gov/pubmed/37570530 http://dx.doi.org/10.3390/nano13152212 |