Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf(1−x)Zr(x)O(2) Thin Films via Atomic Layer Deposition

Hf(1−x)Zr(x)O(2) (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at low concentrations. While doping with Y improves th...

Descripción completa

Detalles Bibliográficos
Autores principales: Oh, Youkyoung, Lee, Seung Won, Choi, Jeong-Hun, Ahn, Seung-Eon, Kim, Hyo-Bae, Ahn, Ji-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421259/
https://www.ncbi.nlm.nih.gov/pubmed/37570505
http://dx.doi.org/10.3390/nano13152187

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421259/
https://www.ncbi.nlm.nih.gov/pubmed/37570505
http://dx.doi.org/10.3390/nano13152187

Ejemplares similares