Photoconduction Properties in Tungsten Disulfide Nanostructures

We reported the photoconduction properties of tungsten disulfide (WS(2)) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The results reveal a linear dependence of photocurrent on the excitation power, and the photoresponsivity shows an independent behavior at higher light intensities (400–4000 Wm(−2)). The WS(2) photodetector exhibits superior performance with responsivity in the range of 36–73 AW(−1) and a normalized gain in the range of 3.5–7.3 10(−6) cm(2)V(−1) at a lower bias voltage of 1 V. The admirable photoresponse at different light intensities suggests that WS(2) nanostructures are of potential as a building block for novel optoelectronic device applications.