Cargando…
Experimental Determination of the Charge Carrier Transport Models for Improving the Simulation of the HR GaAs:Cr Detectors’ Response
The response of Timepix3 detectors with 300 µm and 500 µm thick HR GaAs:Cr sensors was studied with particle beams at the Danish Centre for Particle Therapy in Aarhus, Denmark. Therefore, the detectors were irradiated at different angles with protons of 240 MeV. The precise per-pixel time and energy...
Autores principales: | Smolyanskiy, Petr, Burian, Petr, Sitarz, Mateusz, Bergmann, Benedikt |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10422324/ https://www.ncbi.nlm.nih.gov/pubmed/37571670 http://dx.doi.org/10.3390/s23156886 |
Ejemplares similares
-
Study of Charge Carrier Transport in GaN Sensors
por: Gaubas, Eugenijus, et al.
Publicado: (2016) -
Charge transport properties of undoped SI LEC GaAs siolid-state detectors
por: Beaumont, S P, et al.
Publicado: (1993) -
The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
por: Yang, Haojun, et al.
Publicado: (2017) -
Transport of nonequilibrium charge carriers in irradiated silicon detectors at super fluid helium temperature
por: Shepelev, Artem
Publicado: (2023) -
Registration of the transition radiation with GaAs detector: Data/MC comparison
por: Alozy, J, et al.
Publicado: (2020)