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Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors
Calcium ions (Ca(2+)) are abundantly present in the human body; they perform essential roles in various biological functions. In this study, we propose a highly sensitive and selective biosensor platform for Ca(2+) detection, which comprises a dual-gate (DG) field-effect transistor (FET) with a high...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10422466/ https://www.ncbi.nlm.nih.gov/pubmed/37571503 http://dx.doi.org/10.3390/s23156720 |
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author | Hyun, Tae-Hwan Cho, Won-Ju |
author_facet | Hyun, Tae-Hwan Cho, Won-Ju |
author_sort | Hyun, Tae-Hwan |
collection | PubMed |
description | Calcium ions (Ca(2+)) are abundantly present in the human body; they perform essential roles in various biological functions. In this study, we propose a highly sensitive and selective biosensor platform for Ca(2+) detection, which comprises a dual-gate (DG) field-effect transistor (FET) with a high-k engineered gate dielectric, silicon nanowire (SiNW) random network channel, and Ca(2+)-selective extended gate. The SiNW channel device, which was fabricated via the template transfer method, exhibits superior Ca(2+) sensing characteristics compared to conventional film channel devices. An exceptionally high Ca(2+) sensitivity of 208.25 mV/dec was achieved through the self-amplification of capacitively coupled DG operation and an enhanced amplification ratio resulting from the high surface-to-volume ratio of the SiNW channel. The SiNW channel device demonstrated stable and reliable sensing characteristics, as evidenced by minimal hysteresis and drift effects, with the hysteresis voltage and drift rate measuring less than 6.53% of the Ca(2+) sensitivity. Furthermore, the Ca(2+)-selective characteristics of the biosensor platform were elucidated through experiments with pH buffer, NaCl, and KCl solutions, wherein the sensitivities of the interfering ions were below 7.82% compared to the Ca(2+) sensitivity. The proposed Ca(2+)-selective biosensor platform exhibits exceptional performance and holds great potential in various biosensing fields. |
format | Online Article Text |
id | pubmed-10422466 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-104224662023-08-13 Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors Hyun, Tae-Hwan Cho, Won-Ju Sensors (Basel) Article Calcium ions (Ca(2+)) are abundantly present in the human body; they perform essential roles in various biological functions. In this study, we propose a highly sensitive and selective biosensor platform for Ca(2+) detection, which comprises a dual-gate (DG) field-effect transistor (FET) with a high-k engineered gate dielectric, silicon nanowire (SiNW) random network channel, and Ca(2+)-selective extended gate. The SiNW channel device, which was fabricated via the template transfer method, exhibits superior Ca(2+) sensing characteristics compared to conventional film channel devices. An exceptionally high Ca(2+) sensitivity of 208.25 mV/dec was achieved through the self-amplification of capacitively coupled DG operation and an enhanced amplification ratio resulting from the high surface-to-volume ratio of the SiNW channel. The SiNW channel device demonstrated stable and reliable sensing characteristics, as evidenced by minimal hysteresis and drift effects, with the hysteresis voltage and drift rate measuring less than 6.53% of the Ca(2+) sensitivity. Furthermore, the Ca(2+)-selective characteristics of the biosensor platform were elucidated through experiments with pH buffer, NaCl, and KCl solutions, wherein the sensitivities of the interfering ions were below 7.82% compared to the Ca(2+) sensitivity. The proposed Ca(2+)-selective biosensor platform exhibits exceptional performance and holds great potential in various biosensing fields. MDPI 2023-07-27 /pmc/articles/PMC10422466/ /pubmed/37571503 http://dx.doi.org/10.3390/s23156720 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hyun, Tae-Hwan Cho, Won-Ju Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors |
title | Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors |
title_full | Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors |
title_fullStr | Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors |
title_full_unstemmed | Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors |
title_short | Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors |
title_sort | pushing the limits of biosensing: selective calcium ion detection with high sensitivity via high-k gate dielectric engineered si nanowire random network channel dual-gate field-effect transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10422466/ https://www.ncbi.nlm.nih.gov/pubmed/37571503 http://dx.doi.org/10.3390/s23156720 |
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