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A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology
This paper presents a wideband 4-bit true time delay IC using a 0.25 μm GaN HEMT (High-Electron-Mobility Transistor) process for the beam-squint-free phased array antennas. The true time delay IC is implemented with a switched path circuit topology using DPDT (Double Pole Double Throw) with no shunt...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10422639/ https://www.ncbi.nlm.nih.gov/pubmed/37571609 http://dx.doi.org/10.3390/s23156827 |