Numerical studies on a ternary AgInTe(2) chalcopyrite thin film solar cell

This paper theoretically outlines a new n-AlSb/p-AgInTe(2)/p(+)-BaSi(2) solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based sim...

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Detalles Bibliográficos
Autores principales: Joy, Arifuzzaman, Abir, Ahnaf Tahmid, Mondal, Bipanko Kumar, Hossain, Jaker
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10432989/
https://www.ncbi.nlm.nih.gov/pubmed/37600362
http://dx.doi.org/10.1016/j.heliyon.2023.e19011
Descripción
Sumario:This paper theoretically outlines a new n-AlSb/p-AgInTe(2)/p(+)-BaSi(2) solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe(2) (AIT) solar cell has been probed for finding the role of BaSi(2) as a back surface field (BSF) layer. It is revealed that the device power conversion efficiency (PCE) increments from 30% to 34% owing to the use of BaSi(2) semiconducting BSF with V(OC) = 0.90 V, J(SC) = 43.75 mA/cm(2), FF = 86.42%, respectively. The rippling of the output parameters with respect to the change in series and shunt resistances has also been probed and demonstrated. All the findings reveal the prospect of n-AlSb/p-AIT/p(+)-BaSi(2) dual-heterojunction thin film photovoltaic cell.

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