Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing

Negatively-charged boron vacancy centers ([Formula: see text] ) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure...

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Detalles Bibliográficos
Autores principales: Rizzato, Roberto, Schalk, Martin, Mohr, Stephan, Hermann, Jens C., Leibold, Joachim P., Bruckmaier, Fleming, Salvitti, Giovanna, Qian, Chenjiang, Ji, Peirui, Astakhov, Georgy V., Kentsch, Ulrich, Helm, Manfred, Stier, Andreas V., Finley, Jonathan J., Bucher, Dominik B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10444786/
https://www.ncbi.nlm.nih.gov/pubmed/37607945
http://dx.doi.org/10.1038/s41467-023-40473-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10444786/
https://www.ncbi.nlm.nih.gov/pubmed/37607945
http://dx.doi.org/10.1038/s41467-023-40473-w

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