Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion

Top gate a-InGaZnO (IGZO) thin-film transistors (TFTs) annealed at high temperature show excellent initial current–voltage (I–V) characteristics. However, when they are exposed to positive gate bias for a long time, hump can occur in the subthreshold region. This abnormal hump is accelerated at a hi...

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Detalles Bibliográficos
Autores principales: Park, So Hee, Kim, Min Young, Kim, Hyeong Wook, Oh, Changyong, Lee, Hyeong Keun, Kim, Bo Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10444848/
https://www.ncbi.nlm.nih.gov/pubmed/37608148
http://dx.doi.org/10.1038/s41598-023-40664-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10444848/
https://www.ncbi.nlm.nih.gov/pubmed/37608148
http://dx.doi.org/10.1038/s41598-023-40664-x

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