Cargando…

Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion

Top gate a-InGaZnO (IGZO) thin-film transistors (TFTs) annealed at high temperature show excellent initial current–voltage (I–V) characteristics. However, when they are exposed to positive gate bias for a long time, hump can occur in the subthreshold region. This abnormal hump is accelerated at a hi...

Descripción completa

Detalles Bibliográficos
Autores principales:	Park, So Hee, Kim, Min Young, Kim, Hyeong Wook, Oh, Changyong, Lee, Hyeong Keun, Kim, Bo Sung
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10444848/ https://www.ncbi.nlm.nih.gov/pubmed/37608148 http://dx.doi.org/10.1038/s41598-023-40664-x

Ejemplares similares

Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors
por: Oh, Changyong, et al.
Publicado: (2023)

Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
por: Choi, Sungju, et al.
Publicado: (2019)

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors
por: Hong, Sae-Young, et al.
Publicado: (2019)

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors
por: Lee, Sungsik, et al.
Publicado: (2016)

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
por: Zhou, Yan, et al.
Publicado: (2018)

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors
por: Wang, Yunping, et al.
Publicado: (2022)

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
por: Liu, Yiming, et al.
Publicado: (2021)

Optimizing the Properties of InGaZnO(x) Thin Film Transistors by Adjusting the Adsorbed Degree of Cs(+) Ions
por: Zhang, He, et al.
Publicado: (2019)

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection
por: Fan, Zenghui, et al.
Publicado: (2022)

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors
por: Ning, Honglong, et al.
Publicado: (2017)

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
por: Zhang, Ying, et al.
Publicado: (2019)

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
por: Lei, Liuhui, et al.
Publicado: (2021)

Analysis of Threshold Voltage Shift for Full V(GS)/V(DS)/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
por: Kim, Je-Hyuk, et al.
Publicado: (2021)

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
por: Wang, Dapeng, et al.
Publicado: (2018)

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns
por: Yan, Xingzhen, et al.
Publicado: (2022)

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO(x) Passivation Layers
por: Zhang, Wen, et al.
Publicado: (2021)

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
por: Wang, Chunlan, et al.
Publicado: (2022)

Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness
por: Kim, Ye Kyun, et al.
Publicado: (2016)

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
por: Wang, Dapeng, et al.
Publicado: (2018)

Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films
por: Joo, Hyo-Jun, et al.
Publicado: (2020)

Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors
por: Choi, Woo Sik, et al.
Publicado: (2022)

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
por: Wang, Dapeng, et al.
Publicado: (2019)

Integration of microbattery with thin-film electronics for constructing an integrated transparent microsystem based on InGaZnO
por: Jia, Bin, et al.
Publicado: (2023)

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits
por: Martins, Jorge, et al.
Publicado: (2017)

High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al(2)O(3) Dielectric
por: Shao, Yan, et al.
Publicado: (2019)

Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors
por: Li, Qi, et al.
Publicado: (2022)

Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties
por: Nam, Yunyong, et al.
Publicado: (2018)

Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
por: Kim, Yoon-Seo, et al.
Publicado: (2022)

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
por: Kim, Donguk, et al.
Publicado: (2022)

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C
por: Peng, Cong, et al.
Publicado: (2022)

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
por: Yen, Te Jui, et al.
Publicado: (2020)

Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
por: Park, Byoungjun, et al.
Publicado: (2010)

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric
por: Choi, Seungbeom, et al.
Publicado: (2020)

Effects of NH(3) Plasma and Mg Doping on InGaZnO pH Sensing Membrane
por: Kao, Chyuan-Haur, et al.
Publicado: (2021)

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles
por: Naqi, Muhammad, et al.
Publicado: (2021)

Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors
por: Kang, Soo Cheol, et al.
Publicado: (2020)

Visible-light-stimulated synaptic InGaZnO phototransistors enabled by wavelength-tunable perovskite quantum dots
por: Xin, Zhilong, et al.
Publicado: (2021)

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors
por: Seo, Youngjin, et al.
Publicado: (2019)

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
por: Guerriero, Erica, et al.
Publicado: (2017)

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O(2) mixed-plasma surface treatment
por: Cho, Seong-Kun, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_72gdsq565v5o909hempc3252bd