Al(2)O(3) Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Metal-oxide-semiconductor (MOS) capacitors with Al(2)O(3) as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al(2)O(3) is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO(2) interlayer to improve the ALD nucleation and guara...

Descripción completa

Detalles Bibliográficos
Autores principales: Schilirò, Emanuela, Fiorenza, Patrick, Lo Nigro, Raffaella, Galizia, Bruno, Greco, Giuseppe, Di Franco, Salvatore, Bongiorno, Corrado, La Via, Francesco, Giannazzo, Filippo, Roccaforte, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456437/
https://www.ncbi.nlm.nih.gov/pubmed/37629929
http://dx.doi.org/10.3390/ma16165638

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456437/
https://www.ncbi.nlm.nih.gov/pubmed/37629929
http://dx.doi.org/10.3390/ma16165638

Ejemplares similares