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Al(2)O(3) Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Metal-oxide-semiconductor (MOS) capacitors with Al(2)O(3) as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al(2)O(3) is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO(2) interlayer to improve the ALD nucleation and guara...

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Detalles Bibliográficos
Autores principales:	Schilirò, Emanuela, Fiorenza, Patrick, Lo Nigro, Raffaella, Galizia, Bruno, Greco, Giuseppe, Di Franco, Salvatore, Bongiorno, Corrado, La Via, Francesco, Giannazzo, Filippo, Roccaforte, Fabrizio
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456437/ https://www.ncbi.nlm.nih.gov/pubmed/37629929 http://dx.doi.org/10.3390/ma16165638

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