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A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts
By an abrupt rise in the power conservation efficiency (PCE) of perovskite solar cells (PSCs) within a short span of time, the instability and toxicity of lead were raised as major hurdles in the path toward their commercialization. The usage of an inorganic lead-free CsSnI(3)-based halide perovskit...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456552/ https://www.ncbi.nlm.nih.gov/pubmed/37630098 http://dx.doi.org/10.3390/mi14081562 |
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author | Seyed-Talebi, Seyedeh Mozhgan Mahmoudi, Mehrnaz Lee, Chih-Hao |
author_facet | Seyed-Talebi, Seyedeh Mozhgan Mahmoudi, Mehrnaz Lee, Chih-Hao |
author_sort | Seyed-Talebi, Seyedeh Mozhgan |
collection | PubMed |
description | By an abrupt rise in the power conservation efficiency (PCE) of perovskite solar cells (PSCs) within a short span of time, the instability and toxicity of lead were raised as major hurdles in the path toward their commercialization. The usage of an inorganic lead-free CsSnI(3)-based halide perovskite offers the advantages of enhancing the stability and degradation resistance of devices, reducing the cost of devices, and minimizing the recombination of generated carriers. The simulated standard device using a 1D simulator like solar cell capacitance simulator (SCAPS) with Spiro-OMeTAD hole transporting layer (HTL) at perovskite thickness of 330 nm is in good agreement with the previous experimental result (12.96%). By changing the perovskite thickness and work operating temperature, the maximum efficiency of 18.15% is calculated for standard devices at a perovskite thickness of 800 nm. Then, the effects of replacement of Spiro-OMeTAD with other HTLs including Cu(2)O, CuI, CuSCN, CuSbS(2), Cu(2)ZnSnSe(4), CBTS, CuO, MoS(2), MoO(x), MoO(3), PTAA, P(3)HT, and PEDOT:PSS on photovoltaic characteristics were calculated. The device with Cu(2)ZnSnSe(4) hole transport in the same condition shows the highest efficiency of 21.63%. The back contact also changed by considering different metals such as Ag, Cu, Fe, C, Au, W, Ni, Pd, Pt, and Se. The outcomes provide valuable insights into the efficiency improvement of CsSnI(3)-based PSCs by Spiro-OMeTAD substitution with other HTLs, and back-contact modification upon the comprehensive analysis of 120 devices with different configurations. |
format | Online Article Text |
id | pubmed-10456552 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-104565522023-08-26 A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts Seyed-Talebi, Seyedeh Mozhgan Mahmoudi, Mehrnaz Lee, Chih-Hao Micromachines (Basel) Article By an abrupt rise in the power conservation efficiency (PCE) of perovskite solar cells (PSCs) within a short span of time, the instability and toxicity of lead were raised as major hurdles in the path toward their commercialization. The usage of an inorganic lead-free CsSnI(3)-based halide perovskite offers the advantages of enhancing the stability and degradation resistance of devices, reducing the cost of devices, and minimizing the recombination of generated carriers. The simulated standard device using a 1D simulator like solar cell capacitance simulator (SCAPS) with Spiro-OMeTAD hole transporting layer (HTL) at perovskite thickness of 330 nm is in good agreement with the previous experimental result (12.96%). By changing the perovskite thickness and work operating temperature, the maximum efficiency of 18.15% is calculated for standard devices at a perovskite thickness of 800 nm. Then, the effects of replacement of Spiro-OMeTAD with other HTLs including Cu(2)O, CuI, CuSCN, CuSbS(2), Cu(2)ZnSnSe(4), CBTS, CuO, MoS(2), MoO(x), MoO(3), PTAA, P(3)HT, and PEDOT:PSS on photovoltaic characteristics were calculated. The device with Cu(2)ZnSnSe(4) hole transport in the same condition shows the highest efficiency of 21.63%. The back contact also changed by considering different metals such as Ag, Cu, Fe, C, Au, W, Ni, Pd, Pt, and Se. The outcomes provide valuable insights into the efficiency improvement of CsSnI(3)-based PSCs by Spiro-OMeTAD substitution with other HTLs, and back-contact modification upon the comprehensive analysis of 120 devices with different configurations. MDPI 2023-08-06 /pmc/articles/PMC10456552/ /pubmed/37630098 http://dx.doi.org/10.3390/mi14081562 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Seyed-Talebi, Seyedeh Mozhgan Mahmoudi, Mehrnaz Lee, Chih-Hao A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts |
title | A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts |
title_full | A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts |
title_fullStr | A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts |
title_full_unstemmed | A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts |
title_short | A Comprehensive Study of CsSnI(3)-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts |
title_sort | comprehensive study of cssni(3)-based perovskite solar cells with different hole transporting layers and back contacts |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456552/ https://www.ncbi.nlm.nih.gov/pubmed/37630098 http://dx.doi.org/10.3390/mi14081562 |
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