Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective intentional oxygen doping of sputtered GaN films to obtain highly conductive n(+)-GaN:O films. We have developed a novel and simple method t...

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Detalles Bibliográficos
Autores principales: Maslyk, Monika, Prystawko, Pawel, Kaminska, Eliana, Grzanka, Ewa, Krysko, Marcin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456583/
https://www.ncbi.nlm.nih.gov/pubmed/37629865
http://dx.doi.org/10.3390/ma16165574

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456583/
https://www.ncbi.nlm.nih.gov/pubmed/37629865
http://dx.doi.org/10.3390/ma16165574

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