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Ohmic Contact to n-GaN Using RT-Sputtered GaN:O
One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective intentional oxygen doping of sputtered GaN films to obtain highly conductive n(+)-GaN:O films. We have developed a novel and simple method t...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456583/ https://www.ncbi.nlm.nih.gov/pubmed/37629865 http://dx.doi.org/10.3390/ma16165574 |