Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer...

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Detalles Bibliográficos
Autores principales: Zhang, Penghao, Wang, Luyu, Zhu, Kaiyue, Wang, Qiang, Pan, Maolin, Huang, Ziqiang, Yang, Yannan, Xie, Xinling, Huang, Hai, Hu, Xin, Xu, Saisheng, Xu, Min, Wang, Chen, Wu, Chunlei, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456740/
https://www.ncbi.nlm.nih.gov/pubmed/37630059
http://dx.doi.org/10.3390/mi14081523

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456740/
https://www.ncbi.nlm.nih.gov/pubmed/37630059
http://dx.doi.org/10.3390/mi14081523

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