Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

Hf(0.5)Zr(0.5)O(2)-based multi-level cell (MLC) ferroelectric random-access memory (FeRAM) has great potential for high-density storage applications. However, it is usually limited by the issues of a small operation margin and a large input offset. The study of circuit design and optimization for ML...

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Detalles Bibliográficos
Autores principales: Peng, Bo, Zhang, Donglin, Wang, Zhongqiang, Yang, Jianguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456879/
https://www.ncbi.nlm.nih.gov/pubmed/37630108
http://dx.doi.org/10.3390/mi14081572

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456879/
https://www.ncbi.nlm.nih.gov/pubmed/37630108
http://dx.doi.org/10.3390/mi14081572

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