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A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States

In this paper, we demonstrate a silicon forward-biased positive intrinsic negative (PIN) Mach–Zehnder modulator (MZM), which has two operating states of high efficiency and high speed. The two operating states are switched by changing the position where the electric signal is loaded. The modulator i...

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Detalles Bibliográficos
Autores principales: Yu, Hang, Tu, Donghe, Huang, Xingrui, Yin, Yuxiang, Yu, Zhiguo, Guan, Huan, Jiang, Lei, Li, Zhiyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456945/
https://www.ncbi.nlm.nih.gov/pubmed/37630144
http://dx.doi.org/10.3390/mi14081608
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author Yu, Hang
Tu, Donghe
Huang, Xingrui
Yin, Yuxiang
Yu, Zhiguo
Guan, Huan
Jiang, Lei
Li, Zhiyong
author_facet Yu, Hang
Tu, Donghe
Huang, Xingrui
Yin, Yuxiang
Yu, Zhiguo
Guan, Huan
Jiang, Lei
Li, Zhiyong
author_sort Yu, Hang
collection PubMed
description In this paper, we demonstrate a silicon forward-biased positive intrinsic negative (PIN) Mach–Zehnder modulator (MZM), which has two operating states of high efficiency and high speed. The two operating states are switched by changing the position where the electric signal is loaded. The modulator incorporates a PIN phase shifter integrated with the passive resistance and capacitance (RC) equalizer (PIN-RC), which expands the electro-optic (E-O) bandwidth by equalizing it with modulation efficiency. The fabricated modulator exhibits a low insertion loss of 1.29 dB in two operating states and a compact design with a phase shifter length of 500 [Formula: see text] m. The modulation efficiencies are 0.0088 V·cm and 1.43 V·cm, and the corresponding 3 dB E-O bandwidths are 200 MHz and 7 GHz, respectively. The high-speed modulation performance of the modulator is confirmed by non-return-to-zero (NRZ) modulation with a data rate of 15 Gbps without any pre-emphasis or post-processing. The presented modulator shows functional flexibility, low insertion loss, and a compact footprint, and it can be suitable for applications like optical switch arrays and analog signal processing.
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spelling pubmed-104569452023-08-26 A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States Yu, Hang Tu, Donghe Huang, Xingrui Yin, Yuxiang Yu, Zhiguo Guan, Huan Jiang, Lei Li, Zhiyong Micromachines (Basel) Communication In this paper, we demonstrate a silicon forward-biased positive intrinsic negative (PIN) Mach–Zehnder modulator (MZM), which has two operating states of high efficiency and high speed. The two operating states are switched by changing the position where the electric signal is loaded. The modulator incorporates a PIN phase shifter integrated with the passive resistance and capacitance (RC) equalizer (PIN-RC), which expands the electro-optic (E-O) bandwidth by equalizing it with modulation efficiency. The fabricated modulator exhibits a low insertion loss of 1.29 dB in two operating states and a compact design with a phase shifter length of 500 [Formula: see text] m. The modulation efficiencies are 0.0088 V·cm and 1.43 V·cm, and the corresponding 3 dB E-O bandwidths are 200 MHz and 7 GHz, respectively. The high-speed modulation performance of the modulator is confirmed by non-return-to-zero (NRZ) modulation with a data rate of 15 Gbps without any pre-emphasis or post-processing. The presented modulator shows functional flexibility, low insertion loss, and a compact footprint, and it can be suitable for applications like optical switch arrays and analog signal processing. MDPI 2023-08-15 /pmc/articles/PMC10456945/ /pubmed/37630144 http://dx.doi.org/10.3390/mi14081608 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Yu, Hang
Tu, Donghe
Huang, Xingrui
Yin, Yuxiang
Yu, Zhiguo
Guan, Huan
Jiang, Lei
Li, Zhiyong
A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States
title A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States
title_full A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States
title_fullStr A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States
title_full_unstemmed A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States
title_short A Novel Silicon Forward-Biased PIN Mach–Zehnder Modulator with Two Operating States
title_sort novel silicon forward-biased pin mach–zehnder modulator with two operating states
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456945/
https://www.ncbi.nlm.nih.gov/pubmed/37630144
http://dx.doi.org/10.3390/mi14081608
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