Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si(3)N(4))

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is still unclear. Most prominently, the Si danglin...

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Detalles Bibliográficos
Autores principales: Wilhelmer, Christoph, Waldhoer, Dominic, Cvitkovich, Lukas, Milardovich, Diego, Waltl, Michael, Grasser, Tibor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10460034/
https://www.ncbi.nlm.nih.gov/pubmed/37630870
http://dx.doi.org/10.3390/nano13162286

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10460034/
https://www.ncbi.nlm.nih.gov/pubmed/37630870
http://dx.doi.org/10.3390/nano13162286

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