Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device

Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this...

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Detalles Bibliográficos
Autores principales: Kim, Hyejin, Seo, Jongseon, Cho, Seojin, Jeon, Seonuk, Woo, Jiyong, Lee, Daeseok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10471571/
https://www.ncbi.nlm.nih.gov/pubmed/37652919
http://dx.doi.org/10.1038/s41598-023-41202-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10471571/
https://www.ncbi.nlm.nih.gov/pubmed/37652919
http://dx.doi.org/10.1038/s41598-023-41202-5

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