Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films

Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta(2)O(5)) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 8...

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Detalles Bibliográficos
Autores principales: Khone, Darshika, Kumar, Sandeep, Balal, Mohammad, Barman, Sudipta Roy, Kumar, Sunil, Rana, Abhimanyu Singh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10471767/
https://www.ncbi.nlm.nih.gov/pubmed/37652968
http://dx.doi.org/10.1038/s41598-023-40891-2
Descripción
Sumario:Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta(2)O(5)) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta(2)O(5). Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.

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