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Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films

Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta(2)O(5)) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 8...

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Autores principales: Khone, Darshika, Kumar, Sandeep, Balal, Mohammad, Barman, Sudipta Roy, Kumar, Sunil, Rana, Abhimanyu Singh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10471767/
https://www.ncbi.nlm.nih.gov/pubmed/37652968
http://dx.doi.org/10.1038/s41598-023-40891-2
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author Khone, Darshika
Kumar, Sandeep
Balal, Mohammad
Barman, Sudipta Roy
Kumar, Sunil
Rana, Abhimanyu Singh
author_facet Khone, Darshika
Kumar, Sandeep
Balal, Mohammad
Barman, Sudipta Roy
Kumar, Sunil
Rana, Abhimanyu Singh
author_sort Khone, Darshika
collection PubMed
description Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta(2)O(5)) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta(2)O(5). Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.
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spelling pubmed-104717672023-09-02 Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films Khone, Darshika Kumar, Sandeep Balal, Mohammad Barman, Sudipta Roy Kumar, Sunil Rana, Abhimanyu Singh Sci Rep Article Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta(2)O(5)) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta(2)O(5). Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current. Nature Publishing Group UK 2023-08-31 /pmc/articles/PMC10471767/ /pubmed/37652968 http://dx.doi.org/10.1038/s41598-023-40891-2 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Khone, Darshika
Kumar, Sandeep
Balal, Mohammad
Barman, Sudipta Roy
Kumar, Sunil
Rana, Abhimanyu Singh
Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films
title Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films
title_full Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films
title_fullStr Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films
title_full_unstemmed Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films
title_short Resistive switching and battery-like characteristics in highly transparent Ta(2)O(5)/ITO thin-films
title_sort resistive switching and battery-like characteristics in highly transparent ta(2)o(5)/ito thin-films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10471767/
https://www.ncbi.nlm.nih.gov/pubmed/37652968
http://dx.doi.org/10.1038/s41598-023-40891-2
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