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Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of t...

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Autores principales: Wang, Y. H., Su, J. H., Wang, T. W., Lei, Z. Y., Chen, Z. J., Shangguan, S. P., Han, J. W., Ma, Y. Q.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10475039/
https://www.ncbi.nlm.nih.gov/pubmed/37660183
http://dx.doi.org/10.1038/s41598-023-40983-z
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author Wang, Y. H.
Su, J. H.
Wang, T. W.
Lei, Z. Y.
Chen, Z. J.
Shangguan, S. P.
Han, J. W.
Ma, Y. Q.
author_facet Wang, Y. H.
Su, J. H.
Wang, T. W.
Lei, Z. Y.
Chen, Z. J.
Shangguan, S. P.
Han, J. W.
Ma, Y. Q.
author_sort Wang, Y. H.
collection PubMed
description The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 [Formula: see text]  10(13)/cm(2), and the capture cross section is [Formula: see text]  = 8.5 [Formula: see text]  10(17). The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test.
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spelling pubmed-104750392023-09-04 Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser Wang, Y. H. Su, J. H. Wang, T. W. Lei, Z. Y. Chen, Z. J. Shangguan, S. P. Han, J. W. Ma, Y. Q. Sci Rep Article The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 [Formula: see text]  10(13)/cm(2), and the capture cross section is [Formula: see text]  = 8.5 [Formula: see text]  10(17). The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test. Nature Publishing Group UK 2023-09-02 /pmc/articles/PMC10475039/ /pubmed/37660183 http://dx.doi.org/10.1038/s41598-023-40983-z Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Wang, Y. H.
Su, J. H.
Wang, T. W.
Lei, Z. Y.
Chen, Z. J.
Shangguan, S. P.
Han, J. W.
Ma, Y. Q.
Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser
title Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser
title_full Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser
title_fullStr Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser
title_full_unstemmed Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser
title_short Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser
title_sort study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10475039/
https://www.ncbi.nlm.nih.gov/pubmed/37660183
http://dx.doi.org/10.1038/s41598-023-40983-z
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