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Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477182/ https://www.ncbi.nlm.nih.gov/pubmed/37666843 http://dx.doi.org/10.1038/s41467-023-41077-0 |
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author | Zhu, Wenkai Zhu, Yingmei Zhou, Tong Zhang, Xianpeng Lin, Hailong Cui, Qirui Yan, Faguang Wang, Ziao Deng, Yongcheng Yang, Hongxin Zhao, Lixia Žutić, Igor Belashchenko, Kirill D. Wang, Kaiyou |
author_facet | Zhu, Wenkai Zhu, Yingmei Zhou, Tong Zhang, Xianpeng Lin, Hailong Cui, Qirui Yan, Faguang Wang, Ziao Deng, Yongcheng Yang, Hongxin Zhao, Lixia Žutić, Igor Belashchenko, Kirill D. Wang, Kaiyou |
author_sort | Zhu, Wenkai |
collection | PubMed |
description | Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe(3)GeTe(2)/GaSe/Fe(3)GeTe(2) MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of semiconductors into the MTJs offers energy-band-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not only the magnitude of the TMR is tuned by the semiconductor thickness but also the TMR sign can be reversed by varying the bias voltages, enabling modulation of highly spin-polarized carriers in vdW semiconductors. |
format | Online Article Text |
id | pubmed-10477182 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-104771822023-09-06 Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions Zhu, Wenkai Zhu, Yingmei Zhou, Tong Zhang, Xianpeng Lin, Hailong Cui, Qirui Yan, Faguang Wang, Ziao Deng, Yongcheng Yang, Hongxin Zhao, Lixia Žutić, Igor Belashchenko, Kirill D. Wang, Kaiyou Nat Commun Article Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe(3)GeTe(2)/GaSe/Fe(3)GeTe(2) MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of semiconductors into the MTJs offers energy-band-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not only the magnitude of the TMR is tuned by the semiconductor thickness but also the TMR sign can be reversed by varying the bias voltages, enabling modulation of highly spin-polarized carriers in vdW semiconductors. Nature Publishing Group UK 2023-09-04 /pmc/articles/PMC10477182/ /pubmed/37666843 http://dx.doi.org/10.1038/s41467-023-41077-0 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the articl’'s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Zhu, Wenkai Zhu, Yingmei Zhou, Tong Zhang, Xianpeng Lin, Hailong Cui, Qirui Yan, Faguang Wang, Ziao Deng, Yongcheng Yang, Hongxin Zhao, Lixia Žutić, Igor Belashchenko, Kirill D. Wang, Kaiyou Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions |
title | Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions |
title_full | Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions |
title_fullStr | Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions |
title_full_unstemmed | Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions |
title_short | Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions |
title_sort | large and tunable magnetoresistance in van der waals ferromagnet/semiconductor junctions |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477182/ https://www.ncbi.nlm.nih.gov/pubmed/37666843 http://dx.doi.org/10.1038/s41467-023-41077-0 |
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