Cargando…

Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhu, Wenkai, Zhu, Yingmei, Zhou, Tong, Zhang, Xianpeng, Lin, Hailong, Cui, Qirui, Yan, Faguang, Wang, Ziao, Deng, Yongcheng, Yang, Hongxin, Zhao, Lixia, Žutić, Igor, Belashchenko, Kirill D., Wang, Kaiyou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477182/
https://www.ncbi.nlm.nih.gov/pubmed/37666843
http://dx.doi.org/10.1038/s41467-023-41077-0
_version_ 1785101094276300800
author Zhu, Wenkai
Zhu, Yingmei
Zhou, Tong
Zhang, Xianpeng
Lin, Hailong
Cui, Qirui
Yan, Faguang
Wang, Ziao
Deng, Yongcheng
Yang, Hongxin
Zhao, Lixia
Žutić, Igor
Belashchenko, Kirill D.
Wang, Kaiyou
author_facet Zhu, Wenkai
Zhu, Yingmei
Zhou, Tong
Zhang, Xianpeng
Lin, Hailong
Cui, Qirui
Yan, Faguang
Wang, Ziao
Deng, Yongcheng
Yang, Hongxin
Zhao, Lixia
Žutić, Igor
Belashchenko, Kirill D.
Wang, Kaiyou
author_sort Zhu, Wenkai
collection PubMed
description Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe(3)GeTe(2)/GaSe/Fe(3)GeTe(2) MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of semiconductors into the MTJs offers energy-band-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not only the magnitude of the TMR is tuned by the semiconductor thickness but also the TMR sign can be reversed by varying the bias voltages, enabling modulation of highly spin-polarized carriers in vdW semiconductors.
format Online
Article
Text
id pubmed-10477182
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-104771822023-09-06 Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions Zhu, Wenkai Zhu, Yingmei Zhou, Tong Zhang, Xianpeng Lin, Hailong Cui, Qirui Yan, Faguang Wang, Ziao Deng, Yongcheng Yang, Hongxin Zhao, Lixia Žutić, Igor Belashchenko, Kirill D. Wang, Kaiyou Nat Commun Article Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe(3)GeTe(2)/GaSe/Fe(3)GeTe(2) MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of semiconductors into the MTJs offers energy-band-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not only the magnitude of the TMR is tuned by the semiconductor thickness but also the TMR sign can be reversed by varying the bias voltages, enabling modulation of highly spin-polarized carriers in vdW semiconductors. Nature Publishing Group UK 2023-09-04 /pmc/articles/PMC10477182/ /pubmed/37666843 http://dx.doi.org/10.1038/s41467-023-41077-0 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the articl’'s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Zhu, Wenkai
Zhu, Yingmei
Zhou, Tong
Zhang, Xianpeng
Lin, Hailong
Cui, Qirui
Yan, Faguang
Wang, Ziao
Deng, Yongcheng
Yang, Hongxin
Zhao, Lixia
Žutić, Igor
Belashchenko, Kirill D.
Wang, Kaiyou
Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
title Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
title_full Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
title_fullStr Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
title_full_unstemmed Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
title_short Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
title_sort large and tunable magnetoresistance in van der waals ferromagnet/semiconductor junctions
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477182/
https://www.ncbi.nlm.nih.gov/pubmed/37666843
http://dx.doi.org/10.1038/s41467-023-41077-0
work_keys_str_mv AT zhuwenkai largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT zhuyingmei largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT zhoutong largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT zhangxianpeng largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT linhailong largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT cuiqirui largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT yanfaguang largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT wangziao largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT dengyongcheng largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT yanghongxin largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT zhaolixia largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT zuticigor largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT belashchenkokirilld largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions
AT wangkaiyou largeandtunablemagnetoresistanceinvanderwaalsferromagnetsemiconductorjunctions