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Non-volatile optoelectronic memory based on a photosensitive dielectric
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: la...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10480167/ https://www.ncbi.nlm.nih.gov/pubmed/37669944 http://dx.doi.org/10.1038/s41467-023-40938-y |
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author | Zhu, Rui Liang, Huili Liu, Shangfeng Yuan, Ye Wang, Xinqiang Ling, Francis Chi-Chung Kuznetsov, Andrej Zhang, Guangyu Mei, Zengxia |
author_facet | Zhu, Rui Liang, Huili Liu, Shangfeng Yuan, Ye Wang, Xinqiang Ling, Francis Chi-Chung Kuznetsov, Andrej Zhang, Guangyu Mei, Zengxia |
author_sort | Zhu, Rui |
collection | PubMed |
description | Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (>20 V), high optical power density (>1 mW cm(−2)), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 µW cm(−2), respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption. |
format | Online Article Text |
id | pubmed-10480167 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-104801672023-09-07 Non-volatile optoelectronic memory based on a photosensitive dielectric Zhu, Rui Liang, Huili Liu, Shangfeng Yuan, Ye Wang, Xinqiang Ling, Francis Chi-Chung Kuznetsov, Andrej Zhang, Guangyu Mei, Zengxia Nat Commun Article Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (>20 V), high optical power density (>1 mW cm(−2)), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 µW cm(−2), respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption. Nature Publishing Group UK 2023-09-05 /pmc/articles/PMC10480167/ /pubmed/37669944 http://dx.doi.org/10.1038/s41467-023-40938-y Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Zhu, Rui Liang, Huili Liu, Shangfeng Yuan, Ye Wang, Xinqiang Ling, Francis Chi-Chung Kuznetsov, Andrej Zhang, Guangyu Mei, Zengxia Non-volatile optoelectronic memory based on a photosensitive dielectric |
title | Non-volatile optoelectronic memory based on a photosensitive dielectric |
title_full | Non-volatile optoelectronic memory based on a photosensitive dielectric |
title_fullStr | Non-volatile optoelectronic memory based on a photosensitive dielectric |
title_full_unstemmed | Non-volatile optoelectronic memory based on a photosensitive dielectric |
title_short | Non-volatile optoelectronic memory based on a photosensitive dielectric |
title_sort | non-volatile optoelectronic memory based on a photosensitive dielectric |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10480167/ https://www.ncbi.nlm.nih.gov/pubmed/37669944 http://dx.doi.org/10.1038/s41467-023-40938-y |
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