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Simulating Chern insulators on a superconducting quantum processor

The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor....

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Autores principales: Xiang, Zhong-Cheng, Huang, Kaixuan, Zhang, Yu-Ran, Liu, Tao, Shi, Yun-Hao, Deng, Cheng-Lin, Liu, Tong, Li, Hao, Liang, Gui-Han, Mei, Zheng-Yang, Yu, Haifeng, Xue, Guangming, Tian, Ye, Song, Xiaohui, Liu, Zhi-Bo, Xu, Kai, Zheng, Dongning, Nori, Franco, Fan, Heng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10480218/
https://www.ncbi.nlm.nih.gov/pubmed/37669968
http://dx.doi.org/10.1038/s41467-023-41230-9
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author Xiang, Zhong-Cheng
Huang, Kaixuan
Zhang, Yu-Ran
Liu, Tao
Shi, Yun-Hao
Deng, Cheng-Lin
Liu, Tong
Li, Hao
Liang, Gui-Han
Mei, Zheng-Yang
Yu, Haifeng
Xue, Guangming
Tian, Ye
Song, Xiaohui
Liu, Zhi-Bo
Xu, Kai
Zheng, Dongning
Nori, Franco
Fan, Heng
author_facet Xiang, Zhong-Cheng
Huang, Kaixuan
Zhang, Yu-Ran
Liu, Tao
Shi, Yun-Hao
Deng, Cheng-Lin
Liu, Tong
Li, Hao
Liang, Gui-Han
Mei, Zheng-Yang
Yu, Haifeng
Xue, Guangming
Tian, Ye
Song, Xiaohui
Liu, Zhi-Bo
Xu, Kai
Zheng, Dongning
Nori, Franco
Fan, Heng
author_sort Xiang, Zhong-Cheng
collection PubMed
description The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with various configurations of Aubry-André-Harper chains and observe dynamical localisation of edge excitations. With these two signatures of topology, our experiments implement the bulk-edge correspondence in the synthetic 2D Chern insulator. Moreover, we simulate two different bilayer Chern insulators on the ladder-type superconducting processor. With the same and opposite periodically modulated on-site potentials for two coupled chains, we simulate topologically nontrivial edge states with zero Hall conductivity and a Chern insulator with higher Chern numbers, respectively. Our work shows the potential of using superconducting qubits for investigating different intriguing topological phases of quantum matter.
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spelling pubmed-104802182023-09-07 Simulating Chern insulators on a superconducting quantum processor Xiang, Zhong-Cheng Huang, Kaixuan Zhang, Yu-Ran Liu, Tao Shi, Yun-Hao Deng, Cheng-Lin Liu, Tong Li, Hao Liang, Gui-Han Mei, Zheng-Yang Yu, Haifeng Xue, Guangming Tian, Ye Song, Xiaohui Liu, Zhi-Bo Xu, Kai Zheng, Dongning Nori, Franco Fan, Heng Nat Commun Article The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with various configurations of Aubry-André-Harper chains and observe dynamical localisation of edge excitations. With these two signatures of topology, our experiments implement the bulk-edge correspondence in the synthetic 2D Chern insulator. Moreover, we simulate two different bilayer Chern insulators on the ladder-type superconducting processor. With the same and opposite periodically modulated on-site potentials for two coupled chains, we simulate topologically nontrivial edge states with zero Hall conductivity and a Chern insulator with higher Chern numbers, respectively. Our work shows the potential of using superconducting qubits for investigating different intriguing topological phases of quantum matter. Nature Publishing Group UK 2023-09-05 /pmc/articles/PMC10480218/ /pubmed/37669968 http://dx.doi.org/10.1038/s41467-023-41230-9 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Xiang, Zhong-Cheng
Huang, Kaixuan
Zhang, Yu-Ran
Liu, Tao
Shi, Yun-Hao
Deng, Cheng-Lin
Liu, Tong
Li, Hao
Liang, Gui-Han
Mei, Zheng-Yang
Yu, Haifeng
Xue, Guangming
Tian, Ye
Song, Xiaohui
Liu, Zhi-Bo
Xu, Kai
Zheng, Dongning
Nori, Franco
Fan, Heng
Simulating Chern insulators on a superconducting quantum processor
title Simulating Chern insulators on a superconducting quantum processor
title_full Simulating Chern insulators on a superconducting quantum processor
title_fullStr Simulating Chern insulators on a superconducting quantum processor
title_full_unstemmed Simulating Chern insulators on a superconducting quantum processor
title_short Simulating Chern insulators on a superconducting quantum processor
title_sort simulating chern insulators on a superconducting quantum processor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10480218/
https://www.ncbi.nlm.nih.gov/pubmed/37669968
http://dx.doi.org/10.1038/s41467-023-41230-9
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