Cargando…
Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A
Details of the design and operational status of the silicon-nitride-based entrance slit installed in the Taiwan Photon Source (TPS) 45A beamline are given. The slit is a diamond blade edge etched onto a copper slit part, which is in thermal contact with the silicon nitride base. A stable slit openin...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
International Union of Crystallography
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10481267/ https://www.ncbi.nlm.nih.gov/pubmed/37594863 http://dx.doi.org/10.1107/S1600577523006240 |
_version_ | 1785101937304141824 |
---|---|
author | Hsu, Ming-Ying Fu, Huang-Wen Fung, Hok-Sum Hua, Chih-Yu Huang, Liang-Jen Tsai, Huang-Ming |
author_facet | Hsu, Ming-Ying Fu, Huang-Wen Fung, Hok-Sum Hua, Chih-Yu Huang, Liang-Jen Tsai, Huang-Ming |
author_sort | Hsu, Ming-Ying |
collection | PubMed |
description | Details of the design and operational status of the silicon-nitride-based entrance slit installed in the Taiwan Photon Source (TPS) 45A beamline are given. The slit is a diamond blade edge etched onto a copper slit part, which is in thermal contact with the silicon nitride base. A stable slit opening smaller than 4 µm is achieved in TPS 45A. The beam size at the slit has a full width at half-maximum of 3 µm in the vertical direction with a power of 20 W. Additionally, a hard stop made of invar is incorporated to control the thermal expansion displacement. The slit reduces the size and increases the stability of the source of the monochromator. Consequently, a higher energy resolution and excellent beamline stability are achieved. |
format | Online Article Text |
id | pubmed-10481267 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | International Union of Crystallography |
record_format | MEDLINE/PubMed |
spelling | pubmed-104812672023-09-07 Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A Hsu, Ming-Ying Fu, Huang-Wen Fung, Hok-Sum Hua, Chih-Yu Huang, Liang-Jen Tsai, Huang-Ming J Synchrotron Radiat Research Papers Details of the design and operational status of the silicon-nitride-based entrance slit installed in the Taiwan Photon Source (TPS) 45A beamline are given. The slit is a diamond blade edge etched onto a copper slit part, which is in thermal contact with the silicon nitride base. A stable slit opening smaller than 4 µm is achieved in TPS 45A. The beam size at the slit has a full width at half-maximum of 3 µm in the vertical direction with a power of 20 W. Additionally, a hard stop made of invar is incorporated to control the thermal expansion displacement. The slit reduces the size and increases the stability of the source of the monochromator. Consequently, a higher energy resolution and excellent beamline stability are achieved. International Union of Crystallography 2023-08-18 /pmc/articles/PMC10481267/ /pubmed/37594863 http://dx.doi.org/10.1107/S1600577523006240 Text en © Ming-Ying Hsu et al. 2023 https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited. |
spellingShingle | Research Papers Hsu, Ming-Ying Fu, Huang-Wen Fung, Hok-Sum Hua, Chih-Yu Huang, Liang-Jen Tsai, Huang-Ming Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A |
title | Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A |
title_full | Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A |
title_fullStr | Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A |
title_full_unstemmed | Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A |
title_short | Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A |
title_sort | silicon-nitride-based entrance slit design for the high-power-density monochromator in tps 45a |
topic | Research Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10481267/ https://www.ncbi.nlm.nih.gov/pubmed/37594863 http://dx.doi.org/10.1107/S1600577523006240 |
work_keys_str_mv | AT hsumingying siliconnitridebasedentranceslitdesignforthehighpowerdensitymonochromatorintps45a AT fuhuangwen siliconnitridebasedentranceslitdesignforthehighpowerdensitymonochromatorintps45a AT funghoksum siliconnitridebasedentranceslitdesignforthehighpowerdensitymonochromatorintps45a AT huachihyu siliconnitridebasedentranceslitdesignforthehighpowerdensitymonochromatorintps45a AT huangliangjen siliconnitridebasedentranceslitdesignforthehighpowerdensitymonochromatorintps45a AT tsaihuangming siliconnitridebasedentranceslitdesignforthehighpowerdensitymonochromatorintps45a |