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Picosecond spin-orbit torque–induced coherent magnetization switching in a ferromagnet

Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)–induced coherent magnetization switching dynamics in a ferromagnet. We use a...

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Detalles Bibliográficos
Autores principales: Polley, Debanjan, Pattabi, Akshay, Rastogi, Ashwin, Jhuria, Kaushalya, Diaz, Eva, Singh, Hanuman, Lemaitre, Aristide, Hehn, Michel, Gorchon, Jon, Bokor, Jeffrey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10482325/
https://www.ncbi.nlm.nih.gov/pubmed/37672590
http://dx.doi.org/10.1126/sciadv.adh5562
Descripción
Sumario:Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)–induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar strip line to generate and guide a ~9-picosecond electrical pulse into a heavy metal/ferromagnet multilayer to induce ultrafast SOT. We then use magneto-optical probing to investigate the magnetization dynamics with sub-picosecond resolution. Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds. A macro-magnetic simulation coupled with an ultrafast heating model agrees well with the experiment and suggests coherent magnetization switching without any incubation delay on an unprecedented time scale. Our work proposes a unique magnetization switching mechanism toward markedly increasing the writing speed of SOT magnetic random-access memory devices.