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Synthesis and Atomic Transport of CoSn(3) NanoIMC by In Situ TEM

[Image: see text] In order to optimize the interfacial properties by adding Co to the bumps of copper pillars and to overcome the strong tendency of Co to oxidize, an intermetallic compound (IMC) “capsule” was developed for the purpose of transporting elements through the intermetallic compound. In...

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Detalles Bibliográficos
Autores principales: Wang, Jintao, Wang, Jianqiang, Zhang, Luobin, Lv, Ziwen, Chen, Hongtao, Li, Mingyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10483684/
https://www.ncbi.nlm.nih.gov/pubmed/37692228
http://dx.doi.org/10.1021/acsomega.3c04762
Descripción
Sumario:[Image: see text] In order to optimize the interfacial properties by adding Co to the bumps of copper pillars and to overcome the strong tendency of Co to oxidize, an intermetallic compound (IMC) “capsule” was developed for the purpose of transporting elements through the intermetallic compound. In this study, we present a comprehensive analysis of the transformation process of CoSn(2) nanoparticles into CoSn(3) at the nanoscale using in situ heating transmission electron microscopy (TEM). The experimental results reveal that CoSn(2) nanoparticle growth occurs through polymerization, whereas CoSn(3) nanoparticle formation relies on the reaction between CoSn(2) and Sn. During the initial stages of the reaction, Co dissolves and diffuses into Sn, leading to the nucleation and growth of CoSn(2) in Sn via Ostwald ripening. As the input energy increases, vacancies in CoSn(2) drive a reaction at the Sn/CoSn(2) interface, resulting in the generation of CoSn(3). In this process, Sn nanoparticles enter the CoSn(2) structure through the “Anti Structure Bridge (ASB) mechanism” to fill vacancies. Following the codeposition process, CoSn(3) nanoparticles were successfully plated within the Sn layer of the Cu-pillar bumps. Upon reflow heating, the CoSn(3) nanoparticles exhibited a preference for precipitating the vacant sites within the Sn layer. This process facilitated the release of Co atoms from CoSn(2), enabling their diffusion throughout the entire Sn layer.