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Synthesis and Atomic Transport of CoSn(3) NanoIMC by In Situ TEM
[Image: see text] In order to optimize the interfacial properties by adding Co to the bumps of copper pillars and to overcome the strong tendency of Co to oxidize, an intermetallic compound (IMC) “capsule” was developed for the purpose of transporting elements through the intermetallic compound. In...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10483684/ https://www.ncbi.nlm.nih.gov/pubmed/37692228 http://dx.doi.org/10.1021/acsomega.3c04762 |
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author | Wang, Jintao Wang, Jianqiang Zhang, Luobin Lv, Ziwen Chen, Hongtao Li, Mingyu |
author_facet | Wang, Jintao Wang, Jianqiang Zhang, Luobin Lv, Ziwen Chen, Hongtao Li, Mingyu |
author_sort | Wang, Jintao |
collection | PubMed |
description | [Image: see text] In order to optimize the interfacial properties by adding Co to the bumps of copper pillars and to overcome the strong tendency of Co to oxidize, an intermetallic compound (IMC) “capsule” was developed for the purpose of transporting elements through the intermetallic compound. In this study, we present a comprehensive analysis of the transformation process of CoSn(2) nanoparticles into CoSn(3) at the nanoscale using in situ heating transmission electron microscopy (TEM). The experimental results reveal that CoSn(2) nanoparticle growth occurs through polymerization, whereas CoSn(3) nanoparticle formation relies on the reaction between CoSn(2) and Sn. During the initial stages of the reaction, Co dissolves and diffuses into Sn, leading to the nucleation and growth of CoSn(2) in Sn via Ostwald ripening. As the input energy increases, vacancies in CoSn(2) drive a reaction at the Sn/CoSn(2) interface, resulting in the generation of CoSn(3). In this process, Sn nanoparticles enter the CoSn(2) structure through the “Anti Structure Bridge (ASB) mechanism” to fill vacancies. Following the codeposition process, CoSn(3) nanoparticles were successfully plated within the Sn layer of the Cu-pillar bumps. Upon reflow heating, the CoSn(3) nanoparticles exhibited a preference for precipitating the vacant sites within the Sn layer. This process facilitated the release of Co atoms from CoSn(2), enabling their diffusion throughout the entire Sn layer. |
format | Online Article Text |
id | pubmed-10483684 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-104836842023-09-08 Synthesis and Atomic Transport of CoSn(3) NanoIMC by In Situ TEM Wang, Jintao Wang, Jianqiang Zhang, Luobin Lv, Ziwen Chen, Hongtao Li, Mingyu ACS Omega [Image: see text] In order to optimize the interfacial properties by adding Co to the bumps of copper pillars and to overcome the strong tendency of Co to oxidize, an intermetallic compound (IMC) “capsule” was developed for the purpose of transporting elements through the intermetallic compound. In this study, we present a comprehensive analysis of the transformation process of CoSn(2) nanoparticles into CoSn(3) at the nanoscale using in situ heating transmission electron microscopy (TEM). The experimental results reveal that CoSn(2) nanoparticle growth occurs through polymerization, whereas CoSn(3) nanoparticle formation relies on the reaction between CoSn(2) and Sn. During the initial stages of the reaction, Co dissolves and diffuses into Sn, leading to the nucleation and growth of CoSn(2) in Sn via Ostwald ripening. As the input energy increases, vacancies in CoSn(2) drive a reaction at the Sn/CoSn(2) interface, resulting in the generation of CoSn(3). In this process, Sn nanoparticles enter the CoSn(2) structure through the “Anti Structure Bridge (ASB) mechanism” to fill vacancies. Following the codeposition process, CoSn(3) nanoparticles were successfully plated within the Sn layer of the Cu-pillar bumps. Upon reflow heating, the CoSn(3) nanoparticles exhibited a preference for precipitating the vacant sites within the Sn layer. This process facilitated the release of Co atoms from CoSn(2), enabling their diffusion throughout the entire Sn layer. American Chemical Society 2023-08-24 /pmc/articles/PMC10483684/ /pubmed/37692228 http://dx.doi.org/10.1021/acsomega.3c04762 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Wang, Jintao Wang, Jianqiang Zhang, Luobin Lv, Ziwen Chen, Hongtao Li, Mingyu Synthesis and Atomic Transport of CoSn(3) NanoIMC by In Situ TEM |
title | Synthesis and Atomic Transport of CoSn(3) NanoIMC by In
Situ TEM |
title_full | Synthesis and Atomic Transport of CoSn(3) NanoIMC by In
Situ TEM |
title_fullStr | Synthesis and Atomic Transport of CoSn(3) NanoIMC by In
Situ TEM |
title_full_unstemmed | Synthesis and Atomic Transport of CoSn(3) NanoIMC by In
Situ TEM |
title_short | Synthesis and Atomic Transport of CoSn(3) NanoIMC by In
Situ TEM |
title_sort | synthesis and atomic transport of cosn(3) nanoimc by in
situ tem |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10483684/ https://www.ncbi.nlm.nih.gov/pubmed/37692228 http://dx.doi.org/10.1021/acsomega.3c04762 |
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