Study of The Gas-Swelling Mechanisms in Silicon Carbide Ceramics under High-Temperature Irradiation with Helium Ions

The purpose of this work is to simulate the processes of gaseous swelling in SiC ceramics as well as the associated changes in strength and thermophysical properties under high-temperature irradiation with helium ions. The choices of irradiation conditions (irradiation temperatures of 700 and 1000 K) and irradiation fluences (10(15)–10(18) ion/cm(2)) are based on the possibilities of modeling the processes of destructive changes in the near-surface layer as a result of the accumulation of gas-filled inclusions during high-dose irradiation. During this study, it was found that an increase in the irradiation temperature of the samples from 700 to 1000 K leads to a decrease in the resistance to gas swelling, since with the temperature increase, the mobility of implanted helium in the near-surface layer grows, which results in an increase in the size of gas-filled bubbles and, as a result, accelerated destruction of the damaged layer. It has been established that in the case of irradiation at 700 K, the critical fluence for swelling associated with the formation of visible gas-filled bubbles on the surface is 5 × 10(17) ion/cm(2), while for samples irradiated at a temperature of 1000 K, the formation of gas-filled bubbles is observed at a fluence of 10(17) ion/cm(2). Measurements of the thermal conductivity coefficient showed that the formation of gas-filled bubbles leads to a sharp deterioration in heat transfer processes, which indicates that the created defective inclusions prevent phonon heat transfer. Changes in the strength characteristics showed that a decrease in hardness occurs throughout the entire depth of the damaged ceramic layer. However, with a rise in the irradiation fluence above 10(17) ion/cm(2), a slight damaged layer thickness growth associated with diffusion processes of helium implantation into the near-surface layer is observed. The relevance of this study consists in obtaining new data on the stability of the strength and thermophysical parameters of SiC ceramics in the case of helium accumulation and its subsequent radiation-induced evolution in the case of irradiation at temperatures of 700 and 1000 K. The data obtained during the experimental work on changes in the properties of ceramics will make it possible to determine the potential limits of their applicability in the case of operation under extreme conditions at elevated temperatures in the future.