Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), wh...

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Detalles Bibliográficos
Autores principales: Huang, Pao-Hsun, Chen, Sih-An, Chao, Li-Wei, Xie, Jia-Xun, Liao, Ching-Yu, Tseng, Zong-Liang, Chen, Sheng-Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10488772/
https://www.ncbi.nlm.nih.gov/pubmed/37687753
http://dx.doi.org/10.3390/ma16176060
Descripción
Sumario:Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr(3) QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m(2) and an external quantum efficiency (EQE) up to 3.63%.

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