Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), wh...

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Autores principales: Huang, Pao-Hsun, Chen, Sih-An, Chao, Li-Wei, Xie, Jia-Xun, Liao, Ching-Yu, Tseng, Zong-Liang, Chen, Sheng-Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10488772/
https://www.ncbi.nlm.nih.gov/pubmed/37687753
http://dx.doi.org/10.3390/ma16176060
_version_ 1785103555499130880
author Huang, Pao-Hsun
Chen, Sih-An
Chao, Li-Wei
Xie, Jia-Xun
Liao, Ching-Yu
Tseng, Zong-Liang
Chen, Sheng-Hui
author_facet Huang, Pao-Hsun
Chen, Sih-An
Chao, Li-Wei
Xie, Jia-Xun
Liao, Ching-Yu
Tseng, Zong-Liang
Chen, Sheng-Hui
author_sort Huang, Pao-Hsun
collection PubMed
description Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr(3) QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m(2) and an external quantum efficiency (EQE) up to 3.63%.
format Online
Article
Text
id pubmed-10488772
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-104887722023-09-09 Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers Huang, Pao-Hsun Chen, Sih-An Chao, Li-Wei Xie, Jia-Xun Liao, Ching-Yu Tseng, Zong-Liang Chen, Sheng-Hui Materials (Basel) Communication Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr(3) QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m(2) and an external quantum efficiency (EQE) up to 3.63%. MDPI 2023-09-04 /pmc/articles/PMC10488772/ /pubmed/37687753 http://dx.doi.org/10.3390/ma16176060 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Huang, Pao-Hsun
Chen, Sih-An
Chao, Li-Wei
Xie, Jia-Xun
Liao, Ching-Yu
Tseng, Zong-Liang
Chen, Sheng-Hui
Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
title Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
title_full Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
title_fullStr Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
title_full_unstemmed Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
title_short Efficient CsPbBr(3) Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
title_sort efficient cspbbr(3) quantum-dot light-emitting diodes using sputtered nio films as hole injection layers
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10488772/
https://www.ncbi.nlm.nih.gov/pubmed/37687753
http://dx.doi.org/10.3390/ma16176060
work_keys_str_mv AT huangpaohsun efficientcspbbr3quantumdotlightemittingdiodesusingsputteredniofilmsasholeinjectionlayers
AT chensihan efficientcspbbr3quantumdotlightemittingdiodesusingsputteredniofilmsasholeinjectionlayers
AT chaoliwei efficientcspbbr3quantumdotlightemittingdiodesusingsputteredniofilmsasholeinjectionlayers
AT xiejiaxun efficientcspbbr3quantumdotlightemittingdiodesusingsputteredniofilmsasholeinjectionlayers
AT liaochingyu efficientcspbbr3quantumdotlightemittingdiodesusingsputteredniofilmsasholeinjectionlayers
AT tsengzongliang efficientcspbbr3quantumdotlightemittingdiodesusingsputteredniofilmsasholeinjectionlayers
AT chenshenghui efficientcspbbr3quantumdotlightemittingdiodesusingsputteredniofilmsasholeinjectionlayers

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