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Asymmetric Plasmonic Moth-Eye Nanoarrays with Side Opening for Broadband Incident-Angle-Insensitive Antireflection and Absorption

Plasmonic absorbers with broadband angle-insensitive antireflection have attracted intense interests because of its wide applications in optical devices. Hybrid surfaces with multiple different sub-wavelength array units can provide broadened antireflection, while many of these antireflective surfac...

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Detalles Bibliográficos
Autores principales: Xia, Rong, Li, Yang, You, Song, Lu, Chunhua, Xu, Wenbin, Ni, Yaru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10488887/
https://www.ncbi.nlm.nih.gov/pubmed/37687683
http://dx.doi.org/10.3390/ma16175988
Descripción
Sumario:Plasmonic absorbers with broadband angle-insensitive antireflection have attracted intense interests because of its wide applications in optical devices. Hybrid surfaces with multiple different sub-wavelength array units can provide broadened antireflection, while many of these antireflective surfaces only work for specific angles and require high complexity of nanofabrication. Here, a plasmonic asymmetric nanostructure composed of the moth-eye dielectric nanoarray partially modified with the top Ag nanoshell providing a side opening for broadband incident-angle-insensitive antireflection and absorption, is rationally designed by nanoimprinting lithography and oblique angle deposition. This study illustrates that the plasmonic asymmetric nanostructure not only excites strong plasmonic resonance, but also induces more light entry into the dielectric nanocavity and then enhances the internal scattering, leading to optimized light localization. Hence, the asymmetric nanostructure can effectively enhance light confinement at different incident angles and exhibit better antireflection and the corresponding absorption performance than that of symmetric nanostructure over the visible wavelengths, especially suppressing at least 16.4% lower reflectance in the range of 645–800 nm at normal incidence.Moreover, the reflectance variance of asymmetric nanostructure with the incident angle changing from 5° to 60° is much smaller than that of symmetric nanostructure, making our approach relevant for various applications in photocatalysis, photothermal conversion, and so on.