Cargando…
Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO(2)/Al(2)O(3) Nanolaminated Stacks
The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells will be needed and adopted. In the meantime, th...
Autores principales: | Spassov, Dencho, Paskaleva, Albena |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490109/ https://www.ncbi.nlm.nih.gov/pubmed/37686963 http://dx.doi.org/10.3390/nano13172456 |
Ejemplares similares
-
Radiation Tolerance and Charge Trapping Enhancement of ALD HfO(2)/Al(2)O(3) Nanolaminated Dielectrics
por: Spassov, Dencho, et al.
Publicado: (2021) -
Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO(2)/Al(2)O(3)-Based Charge Trapping Layers
por: Spassov, Dencho, et al.
Publicado: (2022) -
Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
por: Shi, Qiuwei, et al.
Publicado: (2022) -
Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures
por: Xu, Yuan-Dong, et al.
Publicado: (2022) -
Effects of Charge Trapping on Memory Characteristics for HfO(2)-Based Ferroelectric Field Effect Transistors
por: Wang, Jianjian, et al.
Publicado: (2023)