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The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification

Tin-based perovskites are promising for realizing lead-free perovskite solar cells; however, there remains a significant challenge to achieving high-performance tin-based perovskite solar cells. In particular, the device fill factor was much lower than that of other photovoltaic cells. Therefore, un...

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Autores principales: He, Linfeng, Cheng, Jin, Zhao, Longjiang, Chen, Xinyao, Zou, Xiaoping, Zhang, Chunqian, Li, Junming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490360/
https://www.ncbi.nlm.nih.gov/pubmed/37687241
http://dx.doi.org/10.3390/molecules28176414
_version_ 1785103822836727808
author He, Linfeng
Cheng, Jin
Zhao, Longjiang
Chen, Xinyao
Zou, Xiaoping
Zhang, Chunqian
Li, Junming
author_facet He, Linfeng
Cheng, Jin
Zhao, Longjiang
Chen, Xinyao
Zou, Xiaoping
Zhang, Chunqian
Li, Junming
author_sort He, Linfeng
collection PubMed
description Tin-based perovskites are promising for realizing lead-free perovskite solar cells; however, there remains a significant challenge to achieving high-performance tin-based perovskite solar cells. In particular, the device fill factor was much lower than that of other photovoltaic cells. Therefore, understanding how the fill factor was influenced by device physical mechanisms is meaningful. In this study, we reported a method to improve the device fill factor using a thin cesium iodide layer modification in tin-based perovskite cells. With the thin passivation layer, a high-quality perovskite film with larger crystals and lower charge carrier densities was obtained. As a result, the series resistance of devices was decreased; the shunt resistance of devices was increased; and the non-radiative recombination of devices was suppressed. Consequently, the fill factor, and the device efficiency and stability were greatly enhanced. The champion tin-based perovskite cells showed a fill factor of 63%, an efficiency of 6.1% and excellent stability. Our study reveals that, with a moderate thin layer modification strategy, the long-term stability of tin-based PSCs can be developed.
format Online
Article
Text
id pubmed-10490360
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-104903602023-09-09 The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification He, Linfeng Cheng, Jin Zhao, Longjiang Chen, Xinyao Zou, Xiaoping Zhang, Chunqian Li, Junming Molecules Article Tin-based perovskites are promising for realizing lead-free perovskite solar cells; however, there remains a significant challenge to achieving high-performance tin-based perovskite solar cells. In particular, the device fill factor was much lower than that of other photovoltaic cells. Therefore, understanding how the fill factor was influenced by device physical mechanisms is meaningful. In this study, we reported a method to improve the device fill factor using a thin cesium iodide layer modification in tin-based perovskite cells. With the thin passivation layer, a high-quality perovskite film with larger crystals and lower charge carrier densities was obtained. As a result, the series resistance of devices was decreased; the shunt resistance of devices was increased; and the non-radiative recombination of devices was suppressed. Consequently, the fill factor, and the device efficiency and stability were greatly enhanced. The champion tin-based perovskite cells showed a fill factor of 63%, an efficiency of 6.1% and excellent stability. Our study reveals that, with a moderate thin layer modification strategy, the long-term stability of tin-based PSCs can be developed. MDPI 2023-09-03 /pmc/articles/PMC10490360/ /pubmed/37687241 http://dx.doi.org/10.3390/molecules28176414 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
He, Linfeng
Cheng, Jin
Zhao, Longjiang
Chen, Xinyao
Zou, Xiaoping
Zhang, Chunqian
Li, Junming
The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification
title The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification
title_full The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification
title_fullStr The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification
title_full_unstemmed The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification
title_short The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification
title_sort defect passivation of tin halide perovskites using a cesium iodide modification
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490360/
https://www.ncbi.nlm.nih.gov/pubmed/37687241
http://dx.doi.org/10.3390/molecules28176414
work_keys_str_mv AT helinfeng thedefectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT chengjin thedefectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT zhaolongjiang thedefectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT chenxinyao thedefectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT zouxiaoping thedefectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT zhangchunqian thedefectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT lijunming thedefectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT helinfeng defectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT chengjin defectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT zhaolongjiang defectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT chenxinyao defectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT zouxiaoping defectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT zhangchunqian defectpassivationoftinhalideperovskitesusingacesiumiodidemodification
AT lijunming defectpassivationoftinhalideperovskitesusingacesiumiodidemodification