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“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes

Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications. The performance of GeSn PDs is highly dependent on the Sn compositi...

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Detalles Bibliográficos
Autores principales:	Chang, Guo-En, Yu, Shui-Qing, Sun, Greg
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490364/ https://www.ncbi.nlm.nih.gov/pubmed/37687845 http://dx.doi.org/10.3390/s23177386

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