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Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor
The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment. However, the applications of modern biosensors face numerous problems and require improvement. Some of these problem...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490761/ https://www.ncbi.nlm.nih.gov/pubmed/37687945 http://dx.doi.org/10.3390/s23177490 |
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author | Generalov, Vladimir Cheremiskina, Anastasia Glukhov, Alexander Grabezhova, Victoria Kruchinina, Margarita Safatov, Alexander |
author_facet | Generalov, Vladimir Cheremiskina, Anastasia Glukhov, Alexander Grabezhova, Victoria Kruchinina, Margarita Safatov, Alexander |
author_sort | Generalov, Vladimir |
collection | PubMed |
description | The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment. However, the applications of modern biosensors face numerous problems and require improvement. Some of these problems can be attributed to sensor design, while others can be attributed to technological limitations. The aim of this work is to conduct a theoretical investigation of the “antibody + antigen” complex (AB + AG) detection processes of a SOI-FET biosensor, which may also solve some of the aforementioned problems. Our investigation concentrates on the analysis of the probability of AB + AG complex detection and evaluation. Poisson probability density distribution was used to estimate the probability of the adsorption of the target molecules on the biosensor’s surface and, consequently, to obtain correct detection results. Many implicit and unexpected causes of error detection have been identified for AB + AG complexes using SOI-FET biosensors. We showed that accuracy and time of detection depend on the number of SOI-FET biosensors on a crystal. |
format | Online Article Text |
id | pubmed-10490761 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-104907612023-09-09 Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor Generalov, Vladimir Cheremiskina, Anastasia Glukhov, Alexander Grabezhova, Victoria Kruchinina, Margarita Safatov, Alexander Sensors (Basel) Article The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment. However, the applications of modern biosensors face numerous problems and require improvement. Some of these problems can be attributed to sensor design, while others can be attributed to technological limitations. The aim of this work is to conduct a theoretical investigation of the “antibody + antigen” complex (AB + AG) detection processes of a SOI-FET biosensor, which may also solve some of the aforementioned problems. Our investigation concentrates on the analysis of the probability of AB + AG complex detection and evaluation. Poisson probability density distribution was used to estimate the probability of the adsorption of the target molecules on the biosensor’s surface and, consequently, to obtain correct detection results. Many implicit and unexpected causes of error detection have been identified for AB + AG complexes using SOI-FET biosensors. We showed that accuracy and time of detection depend on the number of SOI-FET biosensors on a crystal. MDPI 2023-08-29 /pmc/articles/PMC10490761/ /pubmed/37687945 http://dx.doi.org/10.3390/s23177490 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Generalov, Vladimir Cheremiskina, Anastasia Glukhov, Alexander Grabezhova, Victoria Kruchinina, Margarita Safatov, Alexander Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor |
title | Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor |
title_full | Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor |
title_fullStr | Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor |
title_full_unstemmed | Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor |
title_short | Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor |
title_sort | investigation of limitations in the detection of antibody + antigen complexes using the silicon-on-insulator field-effect transistor biosensor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490761/ https://www.ncbi.nlm.nih.gov/pubmed/37687945 http://dx.doi.org/10.3390/s23177490 |
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