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Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures
We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe(3-x)GeTe(2) and the ferroelectric In(2)Se(3). It is observed that gate voltages applied to the Fe(3-x)GeTe(2)/In(2)Se(3) heterostructure devi...
Autores principales: | , , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10497543/ https://www.ncbi.nlm.nih.gov/pubmed/37699895 http://dx.doi.org/10.1038/s41467-023-41382-8 |
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author | Eom, Jaeun Lee, In Hak Kee, Jung Yun Cho, Minhyun Seo, Jeongdae Suh, Hoyoung Choi, Hyung-Jin Sim, Yumin Chen, Shuzhang Chang, Hye Jung Baek, Seung-Hyub Petrovic, Cedomir Ryu, Hyejin Jang, Chaun Kim, Young Duck Yang, Chan-Ho Seong, Maeng-Je Lee, Jin Hong Park, Se Young Choi, Jun Woo |
author_facet | Eom, Jaeun Lee, In Hak Kee, Jung Yun Cho, Minhyun Seo, Jeongdae Suh, Hoyoung Choi, Hyung-Jin Sim, Yumin Chen, Shuzhang Chang, Hye Jung Baek, Seung-Hyub Petrovic, Cedomir Ryu, Hyejin Jang, Chaun Kim, Young Duck Yang, Chan-Ho Seong, Maeng-Je Lee, Jin Hong Park, Se Young Choi, Jun Woo |
author_sort | Eom, Jaeun |
collection | PubMed |
description | We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe(3-x)GeTe(2) and the ferroelectric In(2)Se(3). It is observed that gate voltages applied to the Fe(3-x)GeTe(2)/In(2)Se(3) heterostructure device modulate the magnetic properties of Fe(3-x)GeTe(2) with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In(2)Se(3) and Fe(3-x)GeTe(2) lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe(3-x)GeTe(2) coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures. |
format | Online Article Text |
id | pubmed-10497543 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-104975432023-09-14 Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures Eom, Jaeun Lee, In Hak Kee, Jung Yun Cho, Minhyun Seo, Jeongdae Suh, Hoyoung Choi, Hyung-Jin Sim, Yumin Chen, Shuzhang Chang, Hye Jung Baek, Seung-Hyub Petrovic, Cedomir Ryu, Hyejin Jang, Chaun Kim, Young Duck Yang, Chan-Ho Seong, Maeng-Je Lee, Jin Hong Park, Se Young Choi, Jun Woo Nat Commun Article We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe(3-x)GeTe(2) and the ferroelectric In(2)Se(3). It is observed that gate voltages applied to the Fe(3-x)GeTe(2)/In(2)Se(3) heterostructure device modulate the magnetic properties of Fe(3-x)GeTe(2) with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In(2)Se(3) and Fe(3-x)GeTe(2) lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe(3-x)GeTe(2) coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures. Nature Publishing Group UK 2023-09-12 /pmc/articles/PMC10497543/ /pubmed/37699895 http://dx.doi.org/10.1038/s41467-023-41382-8 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Eom, Jaeun Lee, In Hak Kee, Jung Yun Cho, Minhyun Seo, Jeongdae Suh, Hoyoung Choi, Hyung-Jin Sim, Yumin Chen, Shuzhang Chang, Hye Jung Baek, Seung-Hyub Petrovic, Cedomir Ryu, Hyejin Jang, Chaun Kim, Young Duck Yang, Chan-Ho Seong, Maeng-Je Lee, Jin Hong Park, Se Young Choi, Jun Woo Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures |
title | Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures |
title_full | Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures |
title_fullStr | Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures |
title_full_unstemmed | Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures |
title_short | Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures |
title_sort | voltage control of magnetism in fe(3-x)gete(2)/in(2)se(3) van der waals ferromagnetic/ferroelectric heterostructures |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10497543/ https://www.ncbi.nlm.nih.gov/pubmed/37699895 http://dx.doi.org/10.1038/s41467-023-41382-8 |
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