Voltage control of magnetism in Fe(3-x)GeTe(2)/In(2)Se(3) van der Waals ferromagnetic/ferroelectric heterostructures

We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe(3-x)GeTe(2) and the ferroelectric In(2)Se(3). It is observed that gate voltages applied to the Fe(3-x)GeTe(2)/In(2)Se(3) heterostructure devi...

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Detalles Bibliográficos
Autores principales: Eom, Jaeun, Lee, In Hak, Kee, Jung Yun, Cho, Minhyun, Seo, Jeongdae, Suh, Hoyoung, Choi, Hyung-Jin, Sim, Yumin, Chen, Shuzhang, Chang, Hye Jung, Baek, Seung-Hyub, Petrovic, Cedomir, Ryu, Hyejin, Jang, Chaun, Kim, Young Duck, Yang, Chan-Ho, Seong, Maeng-Je, Lee, Jin Hong, Park, Se Young, Choi, Jun Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10497543/
https://www.ncbi.nlm.nih.gov/pubmed/37699895
http://dx.doi.org/10.1038/s41467-023-41382-8

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