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Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices

Bi(2)Te(3)‐based alloys have great market demand in miniaturized thermoelectric (TE) devices for solid‐state refrigeration and power generation. However, their poor mechanical properties increase the fabrication cost and decrease the service durability. Here, this work reports on strengthened mechan...

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Autores principales: Zhang, Chaohua, Lai, Qiangwen, Wang, Wu, Zhou, Xuyang, Lan, Kailiang, Hu, Lipeng, Cai, Bowen, Wuttig, Matthias, He, Jiaqing, Liu, Fusheng, Yu, Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10502665/
https://www.ncbi.nlm.nih.gov/pubmed/37386820
http://dx.doi.org/10.1002/advs.202302688
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author Zhang, Chaohua
Lai, Qiangwen
Wang, Wu
Zhou, Xuyang
Lan, Kailiang
Hu, Lipeng
Cai, Bowen
Wuttig, Matthias
He, Jiaqing
Liu, Fusheng
Yu, Yuan
author_facet Zhang, Chaohua
Lai, Qiangwen
Wang, Wu
Zhou, Xuyang
Lan, Kailiang
Hu, Lipeng
Cai, Bowen
Wuttig, Matthias
He, Jiaqing
Liu, Fusheng
Yu, Yuan
author_sort Zhang, Chaohua
collection PubMed
description Bi(2)Te(3)‐based alloys have great market demand in miniaturized thermoelectric (TE) devices for solid‐state refrigeration and power generation. However, their poor mechanical properties increase the fabrication cost and decrease the service durability. Here, this work reports on strengthened mechanical robustness in Bi(2)Te(3)‐based alloys due to thermodynamic Gibbs adsorption and kinetic Zener pinning at grain boundaries enabled by MgB(2) decomposition. These effects result in much‐refined grain size and twofold enhancement of the compressive strength and Vickers hardness in (Bi(0.5)Sb(1.5)Te(3))(0.97)(MgB(2))(0.03) compared with that of traditional powder‐metallurgy‐derived Bi(0.5)Sb(1.5)Te(3). High mechanical properties enable excellent cutting machinability in the MgB(2)‐added samples, showing no missing corners or cracks. Moreover, adding MgB(2) facilitates the simultaneous optimization of electron and phonon transport for enhancing the TE figure of merit (ZT). By further optimizing the Bi/Sb ratio, the sample (Bi(0.4)Sb(1.6)Te(3))(0.97)(MgB(2))(0.03) shows a maximum ZT of ≈1.3 at 350 K and an average ZT of 1.1 within 300–473 K. As a consequence, robust TE devices with an energy conversion efficiency of 4.2% at a temperature difference of 215 K are fabricated. This work paves a new way for enhancing the machinability and durability of TE materials, which is especially promising for miniature devices.
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spelling pubmed-105026652023-09-16 Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices Zhang, Chaohua Lai, Qiangwen Wang, Wu Zhou, Xuyang Lan, Kailiang Hu, Lipeng Cai, Bowen Wuttig, Matthias He, Jiaqing Liu, Fusheng Yu, Yuan Adv Sci (Weinh) Research Articles Bi(2)Te(3)‐based alloys have great market demand in miniaturized thermoelectric (TE) devices for solid‐state refrigeration and power generation. However, their poor mechanical properties increase the fabrication cost and decrease the service durability. Here, this work reports on strengthened mechanical robustness in Bi(2)Te(3)‐based alloys due to thermodynamic Gibbs adsorption and kinetic Zener pinning at grain boundaries enabled by MgB(2) decomposition. These effects result in much‐refined grain size and twofold enhancement of the compressive strength and Vickers hardness in (Bi(0.5)Sb(1.5)Te(3))(0.97)(MgB(2))(0.03) compared with that of traditional powder‐metallurgy‐derived Bi(0.5)Sb(1.5)Te(3). High mechanical properties enable excellent cutting machinability in the MgB(2)‐added samples, showing no missing corners or cracks. Moreover, adding MgB(2) facilitates the simultaneous optimization of electron and phonon transport for enhancing the TE figure of merit (ZT). By further optimizing the Bi/Sb ratio, the sample (Bi(0.4)Sb(1.6)Te(3))(0.97)(MgB(2))(0.03) shows a maximum ZT of ≈1.3 at 350 K and an average ZT of 1.1 within 300–473 K. As a consequence, robust TE devices with an energy conversion efficiency of 4.2% at a temperature difference of 215 K are fabricated. This work paves a new way for enhancing the machinability and durability of TE materials, which is especially promising for miniature devices. John Wiley and Sons Inc. 2023-06-29 /pmc/articles/PMC10502665/ /pubmed/37386820 http://dx.doi.org/10.1002/advs.202302688 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Zhang, Chaohua
Lai, Qiangwen
Wang, Wu
Zhou, Xuyang
Lan, Kailiang
Hu, Lipeng
Cai, Bowen
Wuttig, Matthias
He, Jiaqing
Liu, Fusheng
Yu, Yuan
Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices
title Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices
title_full Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices
title_fullStr Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices
title_full_unstemmed Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices
title_short Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi(2)Te(3)‐Based Thermoelectric Devices
title_sort gibbs adsorption and zener pinning enable mechanically robust high‐performance bi(2)te(3)‐based thermoelectric devices
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10502665/
https://www.ncbi.nlm.nih.gov/pubmed/37386820
http://dx.doi.org/10.1002/advs.202302688
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