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Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs

Chiral molecules are known to behave as spin filters due to the chiral induced spin selectivity (CISS) effect. Chirality can be implemented in molecular semiconductors in order to study the role of the CISS effect in charge transport and to find new materials for spintronic applications. In this stu...

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Autores principales: Volpi, Martina, Jouclas, Rémy, Liu, Jie, Liu, Guangfeng, Catalano, Luca, McIntosh, Nemo, Bardini, Marco, Gatsios, Christos, Modesti, Federico, Turetta, Nicholas, Beljonne, David, Cornil, Jérôme, Kennedy, Alan R., Koch, Norbert, Erk, Peter, Samorì, Paolo, Schweicher, Guillaume, Geerts, Yves H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10502826/
https://www.ncbi.nlm.nih.gov/pubmed/37424043
http://dx.doi.org/10.1002/advs.202301914
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author Volpi, Martina
Jouclas, Rémy
Liu, Jie
Liu, Guangfeng
Catalano, Luca
McIntosh, Nemo
Bardini, Marco
Gatsios, Christos
Modesti, Federico
Turetta, Nicholas
Beljonne, David
Cornil, Jérôme
Kennedy, Alan R.
Koch, Norbert
Erk, Peter
Samorì, Paolo
Schweicher, Guillaume
Geerts, Yves H.
author_facet Volpi, Martina
Jouclas, Rémy
Liu, Jie
Liu, Guangfeng
Catalano, Luca
McIntosh, Nemo
Bardini, Marco
Gatsios, Christos
Modesti, Federico
Turetta, Nicholas
Beljonne, David
Cornil, Jérôme
Kennedy, Alan R.
Koch, Norbert
Erk, Peter
Samorì, Paolo
Schweicher, Guillaume
Geerts, Yves H.
author_sort Volpi, Martina
collection PubMed
description Chiral molecules are known to behave as spin filters due to the chiral induced spin selectivity (CISS) effect. Chirality can be implemented in molecular semiconductors in order to study the role of the CISS effect in charge transport and to find new materials for spintronic applications. In this study, the design and synthesis of a new class of enantiopure chiral organic semiconductors based on the well‐known dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophene (DNTT) core functionalized with chiral alkyl side chains is presented. When introduced in an organic field‐effect transistor (OFET) with magnetic contacts, the two enantiomers, (R)‐DNTT and (S)‐DNTT, show an opposite behavior with respect to the relative direction of the magnetization of the contacts, oriented by an external magnetic field. Each enantiomer displays an unexpectedly high magnetoresistance over one preferred orientation of the spin current injected from the magnetic contacts. The result is the first reported OFET in which the current can be switched on and off upon inversion of the direction of the applied external magnetic field. This work contributes to the general understanding of the CISS effect and opens new avenues for the introduction of organic materials in spintronic devices.
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spelling pubmed-105028262023-09-16 Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs Volpi, Martina Jouclas, Rémy Liu, Jie Liu, Guangfeng Catalano, Luca McIntosh, Nemo Bardini, Marco Gatsios, Christos Modesti, Federico Turetta, Nicholas Beljonne, David Cornil, Jérôme Kennedy, Alan R. Koch, Norbert Erk, Peter Samorì, Paolo Schweicher, Guillaume Geerts, Yves H. Adv Sci (Weinh) Research Articles Chiral molecules are known to behave as spin filters due to the chiral induced spin selectivity (CISS) effect. Chirality can be implemented in molecular semiconductors in order to study the role of the CISS effect in charge transport and to find new materials for spintronic applications. In this study, the design and synthesis of a new class of enantiopure chiral organic semiconductors based on the well‐known dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophene (DNTT) core functionalized with chiral alkyl side chains is presented. When introduced in an organic field‐effect transistor (OFET) with magnetic contacts, the two enantiomers, (R)‐DNTT and (S)‐DNTT, show an opposite behavior with respect to the relative direction of the magnetization of the contacts, oriented by an external magnetic field. Each enantiomer displays an unexpectedly high magnetoresistance over one preferred orientation of the spin current injected from the magnetic contacts. The result is the first reported OFET in which the current can be switched on and off upon inversion of the direction of the applied external magnetic field. This work contributes to the general understanding of the CISS effect and opens new avenues for the introduction of organic materials in spintronic devices. John Wiley and Sons Inc. 2023-07-09 /pmc/articles/PMC10502826/ /pubmed/37424043 http://dx.doi.org/10.1002/advs.202301914 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Volpi, Martina
Jouclas, Rémy
Liu, Jie
Liu, Guangfeng
Catalano, Luca
McIntosh, Nemo
Bardini, Marco
Gatsios, Christos
Modesti, Federico
Turetta, Nicholas
Beljonne, David
Cornil, Jérôme
Kennedy, Alan R.
Koch, Norbert
Erk, Peter
Samorì, Paolo
Schweicher, Guillaume
Geerts, Yves H.
Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs
title Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs
title_full Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs
title_fullStr Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs
title_full_unstemmed Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs
title_short Enantiopure Dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: Reaching High Magnetoresistance Effect in OFETs
title_sort enantiopure dinaphtho[2,3‐b:2,3‐f]thieno[3,2‐b]thiophenes: reaching high magnetoresistance effect in ofets
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10502826/
https://www.ncbi.nlm.nih.gov/pubmed/37424043
http://dx.doi.org/10.1002/advs.202301914
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