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Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co(2)(CO)(6)HC≡CC(5)H(11)] and hydrogen plasma. For this precursor an ALD window in the temperature range between...

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Detalles Bibliográficos
Autores principales:	Franz, Mathias, Safian Jouzdani, Mahnaz, Kaßner, Lysann, Daniel, Marcus, Stahr, Frank, Schulz, Stefan E
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2023
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10509559/ https://www.ncbi.nlm.nih.gov/pubmed/37736660 http://dx.doi.org/10.3762/bjnano.14.78

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