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Direct Visualization of the Charge Transfer in a Graphene/α-RuCl(3) Heterostructure via Angle-Resolved Photoemission Spectroscopy

[Image: see text] We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl(3)) heterostructure using a combination of experimental techniques. α-RuCl(3) is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to i...

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Detalles Bibliográficos
Autores principales: Rossi, Antonio, Johnson, Cameron, Balgley, Jesse, Thomas, John C., Francaviglia, Luca, Dettori, Riccardo, Schmid, Andreas K., Watanabe, Kenji, Taniguchi, Takashi, Cothrine, Matthew, Mandrus, David G., Jozwiak, Chris, Bostwick, Aaron, Henriksen, Erik A., Weber-Bargioni, Alexander, Rotenberg, Eli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10510581/
https://www.ncbi.nlm.nih.gov/pubmed/37639696
http://dx.doi.org/10.1021/acs.nanolett.3c01974
Descripción
Sumario:[Image: see text] We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl(3)) heterostructure using a combination of experimental techniques. α-RuCl(3) is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to its potential applicability in novel optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy and low-energy electron microscopy, we are able to provide a direct visualization of the massive charge transfer from graphene to α-RuCl(3), which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. A measurement of the spatially resolved work function allows for a direct estimate of the interface dipole between graphene and α-RuCl(3). Their strong coupling could lead to new ways of manipulating electronic properties of a two-dimensional heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power optoelectronics devices.