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Microstructure characterization, phase transition, and device application of phase-change memory materials
Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-b...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Taylor & Francis
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10512918/ https://www.ncbi.nlm.nih.gov/pubmed/37745781 http://dx.doi.org/10.1080/14686996.2023.2252725 |
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author | Jiang, Kai Li, Shubing Chen, Fangfang Zhu, Liping Li, Wenwu |
author_facet | Jiang, Kai Li, Shubing Chen, Fangfang Zhu, Liping Li, Wenwu |
author_sort | Jiang, Kai |
collection | PubMed |
description | Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation. |
format | Online Article Text |
id | pubmed-10512918 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Taylor & Francis |
record_format | MEDLINE/PubMed |
spelling | pubmed-105129182023-09-22 Microstructure characterization, phase transition, and device application of phase-change memory materials Jiang, Kai Li, Shubing Chen, Fangfang Zhu, Liping Li, Wenwu Sci Technol Adv Mater Focus on Materials and Technologies for Memristors and Neuromorphic Devices Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation. Taylor & Francis 2023-08-30 /pmc/articles/PMC10512918/ /pubmed/37745781 http://dx.doi.org/10.1080/14686996.2023.2252725 Text en © 2023 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group. https://creativecommons.org/licenses/by-nc/4.0/This is an Open Access article distributed under the terms of the Creative Commons Attribution-NonCommercial License (http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) ), which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. The terms on which this article has been published allow the posting of the Accepted Manuscript in a repository by the author(s) or with their consent. |
spellingShingle | Focus on Materials and Technologies for Memristors and Neuromorphic Devices Jiang, Kai Li, Shubing Chen, Fangfang Zhu, Liping Li, Wenwu Microstructure characterization, phase transition, and device application of phase-change memory materials |
title | Microstructure characterization, phase transition, and device application of phase-change memory materials |
title_full | Microstructure characterization, phase transition, and device application of phase-change memory materials |
title_fullStr | Microstructure characterization, phase transition, and device application of phase-change memory materials |
title_full_unstemmed | Microstructure characterization, phase transition, and device application of phase-change memory materials |
title_short | Microstructure characterization, phase transition, and device application of phase-change memory materials |
title_sort | microstructure characterization, phase transition, and device application of phase-change memory materials |
topic | Focus on Materials and Technologies for Memristors and Neuromorphic Devices |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10512918/ https://www.ncbi.nlm.nih.gov/pubmed/37745781 http://dx.doi.org/10.1080/14686996.2023.2252725 |
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