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Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides

The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is fo...

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Detalles Bibliográficos
Autores principales: Liu, Guodong, Jiang, Haoqian, Guo, Zhenzhou, Zhang, Xiaoming, Jin, Lei, Liu, Cong, Liu, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10520633/
https://www.ncbi.nlm.nih.gov/pubmed/37518836
http://dx.doi.org/10.1002/advs.202301952
Descripción
Sumario:The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin‐polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H‐VX(2) (X = S, Se, Te) in real space. The corner states are robust against symmetry‐breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H‐VX(2) (X = S, Se, Te) materials can be maintained in the presence of spin‐orbit coupling and are stable against magnetization. Overall, the results reveal 2H‐VX(2) (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection.