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Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides

The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is fo...

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Autores principales: Liu, Guodong, Jiang, Haoqian, Guo, Zhenzhou, Zhang, Xiaoming, Jin, Lei, Liu, Cong, Liu, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10520633/
https://www.ncbi.nlm.nih.gov/pubmed/37518836
http://dx.doi.org/10.1002/advs.202301952
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author Liu, Guodong
Jiang, Haoqian
Guo, Zhenzhou
Zhang, Xiaoming
Jin, Lei
Liu, Cong
Liu, Ying
author_facet Liu, Guodong
Jiang, Haoqian
Guo, Zhenzhou
Zhang, Xiaoming
Jin, Lei
Liu, Cong
Liu, Ying
author_sort Liu, Guodong
collection PubMed
description The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin‐polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H‐VX(2) (X = S, Se, Te) in real space. The corner states are robust against symmetry‐breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H‐VX(2) (X = S, Se, Te) materials can be maintained in the presence of spin‐orbit coupling and are stable against magnetization. Overall, the results reveal 2H‐VX(2) (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection.
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spelling pubmed-105206332023-09-27 Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides Liu, Guodong Jiang, Haoqian Guo, Zhenzhou Zhang, Xiaoming Jin, Lei Liu, Cong Liu, Ying Adv Sci (Weinh) Research Articles The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin‐polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H‐VX(2) (X = S, Se, Te) in real space. The corner states are robust against symmetry‐breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H‐VX(2) (X = S, Se, Te) materials can be maintained in the presence of spin‐orbit coupling and are stable against magnetization. Overall, the results reveal 2H‐VX(2) (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection. John Wiley and Sons Inc. 2023-07-30 /pmc/articles/PMC10520633/ /pubmed/37518836 http://dx.doi.org/10.1002/advs.202301952 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Liu, Guodong
Jiang, Haoqian
Guo, Zhenzhou
Zhang, Xiaoming
Jin, Lei
Liu, Cong
Liu, Ying
Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides
title Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides
title_full Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides
title_fullStr Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides
title_full_unstemmed Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides
title_short Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides
title_sort magnetic second‐order topological insulators in 2h‐transition metal dichalcogenides
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10520633/
https://www.ncbi.nlm.nih.gov/pubmed/37518836
http://dx.doi.org/10.1002/advs.202301952
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