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Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides
The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is fo...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10520633/ https://www.ncbi.nlm.nih.gov/pubmed/37518836 http://dx.doi.org/10.1002/advs.202301952 |
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author | Liu, Guodong Jiang, Haoqian Guo, Zhenzhou Zhang, Xiaoming Jin, Lei Liu, Cong Liu, Ying |
author_facet | Liu, Guodong Jiang, Haoqian Guo, Zhenzhou Zhang, Xiaoming Jin, Lei Liu, Cong Liu, Ying |
author_sort | Liu, Guodong |
collection | PubMed |
description | The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin‐polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H‐VX(2) (X = S, Se, Te) in real space. The corner states are robust against symmetry‐breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H‐VX(2) (X = S, Se, Te) materials can be maintained in the presence of spin‐orbit coupling and are stable against magnetization. Overall, the results reveal 2H‐VX(2) (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection. |
format | Online Article Text |
id | pubmed-10520633 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-105206332023-09-27 Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides Liu, Guodong Jiang, Haoqian Guo, Zhenzhou Zhang, Xiaoming Jin, Lei Liu, Cong Liu, Ying Adv Sci (Weinh) Research Articles The transition metal dichalcogenides, 2H‐VX(2) (X = S, Se, Te), are identified as two‐dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by first‐principles calculations. The 2H‐VX(2) (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin‐polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H‐VX(2) (X = S, Se, Te) in real space. The corner states are robust against symmetry‐breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H‐VX(2) (X = S, Se, Te) materials can be maintained in the presence of spin‐orbit coupling and are stable against magnetization. Overall, the results reveal 2H‐VX(2) (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection. John Wiley and Sons Inc. 2023-07-30 /pmc/articles/PMC10520633/ /pubmed/37518836 http://dx.doi.org/10.1002/advs.202301952 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Liu, Guodong Jiang, Haoqian Guo, Zhenzhou Zhang, Xiaoming Jin, Lei Liu, Cong Liu, Ying Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides |
title | Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides |
title_full | Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides |
title_fullStr | Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides |
title_full_unstemmed | Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides |
title_short | Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides |
title_sort | magnetic second‐order topological insulators in 2h‐transition metal dichalcogenides |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10520633/ https://www.ncbi.nlm.nih.gov/pubmed/37518836 http://dx.doi.org/10.1002/advs.202301952 |
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