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Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memory

Spintronic devices are regarded as a promising solution for future computing and memory technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS back-end process. However, the major drawbacks of modern current-driven spintronic devices are the long switching delay an...

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Detalles Bibliográficos
Autores principales: Sin, Stanislav, Oh, Saeroonter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10522764/
https://www.ncbi.nlm.nih.gov/pubmed/37752252
http://dx.doi.org/10.1038/s41598-023-43378-2