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Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memory
Spintronic devices are regarded as a promising solution for future computing and memory technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS back-end process. However, the major drawbacks of modern current-driven spintronic devices are the long switching delay an...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10522764/ https://www.ncbi.nlm.nih.gov/pubmed/37752252 http://dx.doi.org/10.1038/s41598-023-43378-2 |