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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct current (DC) and radio frequency (RF) traits were found...

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Detalles Bibliográficos
Autores principales:	Shin, Ki-Yong, Shin, Ju-Won, Amir, Walid, Chakraborty, Surajit, Shim, Jae-Phil, Lee, Sang-Tae, Jang, Hyunchul, Shin, Chan-Soo, Kwon, Hyuk-Min, Kim, Tae-Woo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10532433/ https://www.ncbi.nlm.nih.gov/pubmed/37763415 http://dx.doi.org/10.3390/ma16186138

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